| 发明名称 |
GAS SENSOR AND SENSOR DEVICE |
| 摘要 |
A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other. |
| 申请公布号 |
US2017067850(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201615353028 |
申请日期 |
2016.11.16 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
Momose Satoru;Tsuboi Osamu;Soga Ikuo |
| 分类号 |
G01N27/414;C23C14/58;H01L29/47;H01L29/16;H01L29/20;C23C14/16;H01L29/24 |
主分类号 |
G01N27/414 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A gas sensor comprising:
a first layer including copper (I) bromide; and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other. |
| 地址 |
Kawasaki-shi JP |
