| 摘要 |
Provided is a technology which is capable of inhibiting reduction in the effective area of wiring due to through holes, and which is capable of stably supplying power. In this semiconductor device (1), a surface-layer power supply path (40), which supplies power to a semiconductor chip (51p) via an inner-circumferential-side power supply terminal group (141g) and an outer-circumferential-side power supply terminal group (16g), is provided to a surface-layer wiring layer (31) of a main substrate (3) provided with a plurality of wiring layers (31, 32, 33, 39) and through holes (TH), said surface-layer wiring layer having a chip module (5M) mounted thereto. The surface-layer power supply path (40) is continuously formed so as to overlap the inner-circumferential-side power supply terminal group (141g) and the outer-circumferential-side power supply terminal group (16g) when viewed from an orthogonal direction (Z), and extend in a direction (Y) heading towards the outer circumferential side of the main substrate (3) from a position connected to the inner-circumferential-side power supply terminal group (141g). |
