| 发明名称 |
MAGNETIC DOMAIN WALL LOGIC DEVICES AND INTERCONNECT |
| 摘要 |
Described is an apparatus which comprises: first, second, and third free magnetic layers; a first metal layer of first material coupled to the first and third free magnetic layers; and a second metal layer of second material different from the first material, the second metal layer coupled to the second and third free magnetic layers. Described is an STT majority gate device which comprises: a free magnetic layer in a ring; and first, second, third, and fourth free magnetic layers coupled to the free magnetic layer. |
| 申请公布号 |
US2017069831(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201415119380 |
申请日期 |
2014.03.25 |
| 申请人 |
Intel Corporation |
发明人 |
NIKONOV Dmitri E.;MANIPATRUNI Sasikanth;Young Ian A. |
| 分类号 |
H01L43/08;H01L43/10 |
主分类号 |
H01L43/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus comprising:
first, second, and third free magnetic layers; a first metal layer of first material coupled to the first and third free magnetic layers; and a second metal layer of second material different from the first material, the second metal layer coupled to the second and third free magnetic layers. |
| 地址 |
Santa Clara CA US |
