发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME |
摘要 |
A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer. |
申请公布号 |
US2017069761(A1) |
申请公布日期 |
2017.03.09 |
申请号 |
US201615357273 |
申请日期 |
2016.11.21 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
KIM BONG-KYUN;YOON SEUNG-HO;CHOI SHIN-IL |
分类号 |
H01L29/786;H01L29/417;H01L29/66;H01L29/45;H01L21/441;H01L23/532;H01L27/12;H01L21/4763 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
1. A thin film transistor substrate, comprising:
a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor; a source electrode and a drain electrode disposed on the semiconductor layer, wherein the drain electrode is spaced apart from the source electrode; and a capping layer disposed on the main wiring layer and that includes a transparent conductive oxide, wherein the source electrode and the drain electrode each include a barrier layer and a main wiring layer disposed on the barrier layer, and wherein the barrier layer includes a first metal layer disposed on the semiconductor layer and a second metal layer disposed on the first metal layer. |
地址 |
YONGIN-SI KR |