发明名称 METHOD OF FORMING MASK PATTERN, METHOD OF PROCESSING SUBSTRATE, AND METHOD OF FABRICATING ELEMENT CHIPS
摘要 In a method of fabricating element chips, a method of forming a mask pattern, and a method of processing a substrate, a process sequence is set such that developing in which the exposure-ended protection film is patterned is performed, after grinding in which the substrate is thinned by grinding a second surface opposite to a first surface to which a photosensitive protection film is pasted. Thereby, it is possible to perform the grinding for thinning in a state where the protection film is stable without being patterned, and to prevent the substrate or the protection film on which a mask pattern of the substrate is formed from being damaged at the time of the grinding, even in a case where a thin substrate of a wafer shape becomes a target.
申请公布号 US2017069522(A1) 申请公布日期 2017.03.09
申请号 US201615252899 申请日期 2016.08.31
申请人 Panasonic Intellectual Property Management Co., Ltd. 发明人 HIROSHIMA Mitsuru;HARIKAI Atsushi
分类号 H01L21/683;H01L21/78;H01L21/304 主分类号 H01L21/683
代理机构 代理人
主权项 1. A method of forming a mask pattern in a substrate, comprising: preparing a substrate having a first surface on which a photosensitive protection film is formed and a second surface opposite to the first surface; exposing at least a part of the protection film; pasting a protection sheet to the protection film of the first surface after the exposing; grinding the second surface to thin the substrate after the pasting; peeling the protection sheet to uncover the protection film of the first surface after the grinding; and patterning the protection film by making the protection film come into contact with a developing solution which selectively dissolves any one of an exposed protection film and an unexposed protection film after the peeling.
地址 Osaka JP
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