| 发明名称 |
Conformal Middle Layer For A Lithography Process |
| 摘要 |
A method includes performing a first polymerization process on a monomer solution to form a partially processed resin solution, the partially processed resin solution comprising a solvent and a silicon-based resin, spin coating the partially processed resin solution on a substrate, and performing a second polymerization process on the partially processed resin solution to shrink the partially processed resin solution to form a conformal silicon-based resin layer. |
| 申请公布号 |
US2017069496(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201514846308 |
申请日期 |
2015.09.04 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Liu Chen-Yu;Chang Ching-Yu;Weng Ming-Hui |
| 分类号 |
H01L21/033 |
主分类号 |
H01L21/033 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
performing a first polymerization process on a monomer solution to form a partially processed resin solution, the partially processed resin solution comprising a solvent and a silicon-based resin; spin coating the partially processed resin solution on a substrate; and performing a second polymerization process on the partially processed resin solution to shrink the partially processed resin solution to form a conformal silicon-based resin layer. |
| 地址 |
Hsin-Chu TW |
