METHODS AND APPARATUS FOR UNIFORMLY AND HIGH-RATE DEPOSITING LOW RESISTIVITY MICROCRYSTALLINE SILICON FILMS FOR DISPLAY DEVICES

摘要

The present disclosure generally relates to an improved method for forming low resistivity crystalline silicon films for display devices. The processing chamber in which the low resistivity crystalline silicon film is formed is pressurized to a predetermined pressure and a radio frequency power at a predetermined power level is delivered to the processing chamber. In addition, feeding locations of one or more VHF power generator and controlling of each VHF power generator via phase modulation and sweeping allows for plasma uniformity improvements by compensating for the non-uniformity of the thin film patterns produced by the chamber, due to the standing wave effect. Diffuser plate having two curved surfaces helps improve crystallinity uniformity.

主权项

1. A method for forming a crystalline silicon layer, comprising:
placing a substrate into a processing chamber; supplying a gas mixture into the processing chamber; applying a RF power at a first mode to the gas mixture; pulsing the gas mixture into the processing chamber; and applying the RF power at a second mode to the pulsed gas mixture, wherein the RF power at the second mode has a power density ranging from about 1.5 Watts/cm2 to about 3.5 Watts/cm2.