PROCESS CHAMBER FOR CYCLIC AND SELECTIVE MATERIAL REMOVAL AND ETCHING

摘要

A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.

主权项

1. A processing chamber apparatus, comprising:
a chamber body defining a process region and configured to generate a direct plasma therein; a substrate support assembly comprising an electrostatic chuck disposed within the process region; a source module comprising a plate stack coupled to the chamber body, wherein the plate stack further defines the process region and is configured to generate a remote plasma therein; a flow module coupled to the chamber body; and an exhaust module comprising a symmetric flow valve and a symmetric turbo molecular pump coupled to the flow module, wherein the chamber body, the source module, the flow module, and the exhaust module are configured to symmetrically process a substrate.