| 发明名称 |
POROUS SEMICONDUCTOR LAYER, PASTE FOR POROUS SEMICONDUCTOR LAYER, AND DYE-SENSITIZED SOLAR CELL |
| 摘要 |
A porous semiconductor layer contains anatase-type titanium oxide particles (A) which have an average primary particle size of 1 nm to 70 nm, and particles (B) obtained by coating surfaces of rutile-type titanium oxide particles, which have an average primary particle size of 100 nm to 1,000 nm, with an insulating material. |
| 申请公布号 |
US2017069432(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201515121769 |
申请日期 |
2015.02.23 |
| 申请人 |
SUMITOMO OSAKA CEMENT CO., LTD. |
发明人 |
YAKUBO Teppei;TAKANO Shingo |
| 分类号 |
H01G9/20 |
主分类号 |
H01G9/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A porous semiconductor layer comprising:
(A) anatase-type titanium oxide particles which have an average primary particle size of 1 nm to 70 nm; and (B) particles obtained by coating surfaces of rutile-type titanium oxide particles, which have an average primary particle size of 100 nm to 1,000 nm, with an insulating material. |
| 地址 |
TOKYO JP |
