| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer. |
| 申请公布号 |
US2017068047(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201615243718 |
申请日期 |
2016.08.22 |
| 申请人 |
RENESAS ELECTRONICS CORPORATION ;PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION |
发明人 |
USAMI TATSUYA;SAKAMOTO KEIJI;YAMAMOTO YOSHIAKI;WATANUKI SHINICHI;WAKABAYASHI MASARU;MOGAMI TOHRU;HORIKAWA TSUYOSHI;KINOSHITA KEIZO |
| 分类号 |
G02B6/12;G02B6/136;G02B6/132 |
主分类号 |
G02B6/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a base substrate; an insulating layer formed on the base substrate; a first optical waveguide composed of a semiconductor layer formed on the insulating layer; and a first insulating film formed along an upper surface of the insulating layer and a front surface of the first optical waveguide, wherein a first peripheral edge portion of a first lower surface of the first optical waveguide is separated from the insulating layer, and the first insulating film is buried between the first peripheral edge portion and the insulating layer. |
| 地址 |
TOKYO JP |
