CRUCIBLE FOR PRODUCING SILICON INGOTS, METHOD FOR ITS PRODUCTION AND SILICON INGOT

摘要

The invention relates to a crucible for producing silicon ingots, comprising a crucible bottom and crucible walls, the crucible bottom having at least in sections a silicon nitride-containing coating that has a root mean square value of at least 10 μm and a layer thickness of at least 30 μm. The invention also relates to a method for coating crucibles that are suitable for the production of silicon ingots, and to silicon ingots produced in this way.