MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A memory device and a method for fabricating the same are provided. A memory device includes a tunneling dielectric layer located on a substrate. The floating gate includes a first doped portion on the tunneling dielectric layer and a second doped portion located on the first doped portion. The first doped portion includes a first dopant and a second dopant, and the second doped portion includes the first dopant. The grain size of the first doped portion is smaller than the grain size of the second doped portion, and the grain size of the first doped portion is between 150 Å to 200 Å. The memory device further includes an inter-gate dielectric layer on the floating gate and a control gate on the inter-gate dielectric layer. A source region and a drain region are located in the substrate besides sidewalls of the floating gate.

主权项

1. A memory device, comprising:
a tunneling dielectric layer, located on a substrate; a floating gate comprising a first doped portion on the tunneling dielectric layer and a second doped portion on the first doped portion, wherein the first doped portion comprises a first dopant and a second dopant, and the second doped portion comprises the first dopant; an inter-gate dielectric layer, located on the floating gate; a control gate, located on the inter-gate dielectric layer; and a source region and a drain region, located in the substrate beside sidewalls of the floating gate, wherein the second dopant comprises oxygen, wherein a grain size of the first doped portion is smaller than a grain size of the second doped portion.