| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device capable of suppressing current collapse is provided. The semiconductor device includes a substrate, a nitride semiconductor layer on the substrate, and including a first region and a second region having a thickness greater than that of the first region, a source electrode on the first region, a drain electrode on the second region, and a gate electrode on the first region between the source electrode and the drain electrode. |
| 申请公布号 |
US2017069747(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201615062206 |
申请日期 |
2016.03.07 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAITO Yasunobu;NAKA Toshiyuki;SATO Nobuyuki |
| 分类号 |
H01L29/778;H01L29/66;H01L29/40;H01L29/423;H01L29/20;H01L29/205 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; a nitride semiconductor layer on the substrate, and including a first region and a second region having a thickness greater than that of the first region; a source electrode on the first region; a drain electrode on the second region; and a gate electrode on the first region between the source electrode and the drain electrode. |
| 地址 |
Tokyo JP |
