III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED IMPLANTED SPECIES

摘要

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

主权项

1. A semiconductor structure, comprising:
a substrate comprising silicon; a III-nitride material region located over a surface region of the substrate; and an implanted species arranged within the surface region of the substrate in a pattern spatially defined across at least one lateral dimension of the substrate, wherein the implanted species is present within at least a portion of the surface region of the substrate at a concentration of at least about 1019/cm3.