| 发明名称 |
PARASITIC CHANNEL MITIGATION VIA IMPLANTATION OF LOW ATOMIC MASS SPECIES |
| 摘要 |
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates. |
| 申请公布号 |
US2017069742(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201514847234 |
申请日期 |
2015.09.08 |
| 申请人 |
M/A-COM Technology Solutions Holdings, Inc. |
发明人 |
Roberts John Claassen;Cook, JR. James W. |
| 分类号 |
H01L29/778;H01L29/66;H01L29/06;H01L21/265;H01L29/20;H01L29/205 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor structure, comprising:
implanting a species having a relative atomic mass of less than 5 into a substrate comprising silicon to produce a surface region comprising no parasitic channel or comprising a low-conductivity parasitic channel wherein, during the implanting step, at least a portion of the species is implanted through a III-nitride material region. |
| 地址 |
Lowell MA US |
