POWER SEMICONDUCTOR DEVICE

摘要

A power semiconductor device includes a semiconductor substrate, trench structures comprising a first, a second, a third and a fourth trench structure formed in the substrate, a second conductivity type body region formed between the trench structures, a first conductivity type source region formed in the second conductivity type body region, and an emitter electrode and a gate pad formed over the substrate, wherein each trench structure includes a top electrode and a bottom electrode, and each top electrode is insulated from the corresponding bottom electrode, and wherein the first trench structure is symmetric to the fourth trench structure, and the second trench structure is symmetric to the third trench structure, and wherein the first trench structure is not identical to the second trench structure, and wherein no first conductivity type source region is formed to be adjacent to the second trench structure and the third trench structure.

主权项

1. A power semiconductor device, comprising:
a semiconductor substrate; trench structures comprising a first, a second, a third and a fourth trench structure formed in the substrate; a second conductivity type body region formed between the trench structures; a first conductivity type source region formed in the second conductivity type body region; and an emitter electrode and a gate pad formed over the substrate, wherein each trench structure comprises a top electrode and a bottom electrode, and each top electrode is insulated from a corresponding bottom electrode, and wherein the first trench structure is symmetric to the fourth trench structure, and the second trench structure is symmetric to the third trench structure, and wherein the first trench structure is different from the second trench structure, and wherein no first conductivity type source region is formed to be adjacent to the second trench structure and the third trench structure.