OXIDE DIELECTRIC ELEMENT AND METHOD FOR MANUFACTURING OXIDE DIELECTRIC ELEMENT

摘要

The present invention provides a technique for a protective film for an oxide dielectric element so that it is possible to improve the piezoelectric properties by lowering the restraining force provided by the protective film, suppress a decrease in permittivity, and prevent a decrease in physical properties caused by deterioration in reduction due to hydrogen ions. This oxide dielectric element 15 is provided with a Si substrate 1 and an oxide dielectric thin-film laminate layer 8 that is provided on the Si substrate 1 and has first and second electrode layers 4, 6 provided on either side of an oxide dielectric layer 5. The oxide dielectric thin-film laminate layer 8 is covered with a protective film 7 comprising a polymer having a high molecular weight. The protective film 7 can be formed using vapor deposition polymerization.