| 发明名称 |
III-NITRIDE LIGHT EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT EMITTING REGION |
| 摘要 |
A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition. |
| 申请公布号 |
US2017117440(A9) |
申请公布日期 |
2017.04.27 |
| 申请号 |
US201414501167 |
申请日期 |
2014.09.30 |
| 申请人 |
Lumileds LLC |
发明人 |
SHEN YU-CHEN;GARDNER NATHAN F.;WATANABE SATOSHI;KRAMES MICHAEL R.;MUELLER GERD O. |
| 分类号 |
H01L33/32 |
主分类号 |
H01L33/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. (canceled) |
| 地址 |
San Jose CA US |
