发明名称 RF POWER TRANSISTORS WITH VIDEO BANDWIDTH CIRCUITS, AND METHODS OF MANUFACTURE THEREOF
摘要 Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.
申请公布号 US2017117856(A1) 申请公布日期 2017.04.27
申请号 US201514919511 申请日期 2015.10.21
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 ZHU NING;HOLMES DAMON G.;JONES JEFFREY K.
分类号 H03F1/56;H03F3/19 主分类号 H03F1/56
代理机构 代理人
主权项 1. (canceled)
地址 AUSTIN TX US