发明名称 |
RF POWER TRANSISTORS WITH VIDEO BANDWIDTH CIRCUITS, AND METHODS OF MANUFACTURE THEREOF |
摘要 |
Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit. |
申请公布号 |
US2017117856(A1) |
申请公布日期 |
2017.04.27 |
申请号 |
US201514919511 |
申请日期 |
2015.10.21 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ZHU NING;HOLMES DAMON G.;JONES JEFFREY K. |
分类号 |
H03F1/56;H03F3/19 |
主分类号 |
H03F1/56 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
AUSTIN TX US |