DAMAGE-AND-RESIST-FREE LASER PATTERNING OF DIELECTRIC FILMS ON TEXTURED SILICON

摘要

In accordance with embodiments disclosed herein, there are provided methods and systems for implementing damage-and-resist-free laser patterning of dielectric films on textured silicon. For example, in one embodiment, such means include means for depositing a Silicon nitride (SiNx) or SiOx (silicon oxide) layer onto a crystalline silicon (c-Si) substrate by a Plasma Enhanced Chemical Vapor Deposition (PECVD) processing; depositing an amorphous silicon (a-Si) film on top of the SiNx or SiOx layer; patterning the a-Si film to define an etch mask for the SiNx or SiOx layer; removing the SiNx or SiOx layer via a Buffered Oxide Etch (BOE) chemical etch to expose the c-Si surface; removing the a-Si mask with a hydrogen plasma etch in a PECVD tool to prevent current loss from the mask; and plating the exposed c-Si surface with metal contacts. Other related embodiments are disclosed.

主权项

1. A method comprising:
depositing a Silicon nitride (SiNx) or SiOx (silicon oxide) layer onto a crystalline silicon (c-Si) substrate by a Plasma Enhanced Chemical Vapor Deposition (PECVD) processing; depositing an amorphous silicon (a-Si) film on top of the SiNx or SiOx layer; patterning the a-Si film to define an etch mask for the SiNx or SiOx layer; removing the SiNx or SiOx layer via a Buffered Oxide Etch (BOE) chemical etch to expose the c-Si surface; removing the a-Si mask; and plating the exposed c-Si surface with metal contacts.