INTEGRATION OF AIR-SENSITIVE TWO-DIMENSIONAL MATERIALS ON ARBITRARY SUBSTRATES FOR THE MANUFACTURING OF ELECTRONIC DEVICES

摘要

A field-effect transistor and method for fabricating such a field-effect transistor that utilizes an air-sensitive two-dimensional material (e.g., silicene). A film of air-sensitive two-dimensional material is deposited on a crystallized metallic (e.g., Ag) thin film on a substrate (e.g., mica substrate). A capping layer of insulating material (e.g., aluminum oxide) is deposited on the air-sensitive two-dimensional material. The substrate is detached from the metallic thin film/air-sensitive two-dimensional material/insulating material stack structure. The metallic thin film/air-sensitive two-dimensional material/insulating material stack structure is then flipped. The flipped metallic thin film/air-sensitive two-dimensional material/insulating material stack structure is attached to a device substrate followed by having the metallic thin film etched to form contact electrodes. In this manner, the pristine properties of air-sensitive two-dimensional materials are preserved from degradation when exposed to air. Furthermore, this new technique allows safe transfer and device fabrication of air-sensitive two-dimensional materials with a low material and process cost.

主权项

1. A method for fabricating a field-effect transistor, the method comprising:
depositing a film of air-sensitive two-dimensional material on a crystallized metallic thin film on a substrate; depositing a capping layer of insulating material on said air-sensitive two-dimensional material; detaching said substrate from said metallic thin film/air-sensitive two-dimensional material/insulating material stack structure; flipping said metallic thin film/air-sensitive two-dimensional material/insulating material stack structure; attaching said flipped metallic thin film/air-sensitive two-dimensional material/insulating material stack structure to a device substrate; and etching said metallic thin film forming contact electrodes.