TOP PINNED SOT-MRAM ARCHITECTURE WITH IN-STACK SELECTOR

摘要

Embodiments of the present disclosure generally relate to data storage and computer memory systems, and more particularly, to a SOT-MRAM cell and chip architecture. The SOT-MRAM chip architecture includes a memory cell array having a plurality of first leads, a plurality of second leads, and a plurality of memory cells. Each memory cell of the plurality of memory cells includes a MTJ and a selector element. These SOT-MRAM cells eliminate the need to pass large currents through the barrier layer of the MTJ and the selector element eliminates the large transistors usually required for selecting a single memory cell without disturbing neighboring memory cells.

主权项

1. A memory cell, comprising:
a magnetic tunnel junction; and a selector element disposed on the magnetic tunnel junction.