PAGE BUFFER AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME

摘要

A semiconductor memory device may include a memory cell array including a plurality of memory cells, and a plurality of page buffers respectively coupled to a plurality of bit lines of the memory cell array, the page buffers being supplied with internal voltages to precharge the plurality of bit lines or to sense an amount of current flowing through the plurality of bit lines, during a sensing operation, wherein each of the page buffers converts the internal voltages into supply voltages having constant potential levels.

主权项

1. A semiconductor memory device, comprising:
a memory cell array including a plurality of memory cells; and a plurality of page buffers respectively coupled to a plurality of bit lines of the memory cell array, the page buffers being supplied with internal voltages to precharge the plurality of bit lines or to sense an amount of current flowing through the plurality of bit lines, during a sensing operation, wherein each of the page buffers comprises a current determination circuit that regulates a down converting voltage of the internal voltages to an internal down converting voltage having a constant potential level and performs an operation sensing the amount of current by using an regulated internal down converting voltage.