| 发明名称 |
FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY, SYSTEM, AND COMPOSITION |
| 摘要 |
A field-effect transistor includes a gate electrode to apply a gate voltage, a source electrode and a drain electrode to take electric current out, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes an oxide including silicon and one or two or more alkaline earth metal elements. |
| 申请公布号 |
US2017116916(A1) |
申请公布日期 |
2017.04.27 |
| 申请号 |
US201615289243 |
申请日期 |
2016.10.10 |
| 申请人 |
Saotome Ryoichi;Ueda Naoyuki;Nakamura Yuki;Abe Yukiko;Matsumoto Shinji;Sone Yuji;Arae Sadanori;Kusayanagi Minehide |
发明人 |
Saotome Ryoichi;Ueda Naoyuki;Nakamura Yuki;Abe Yukiko;Matsumoto Shinji;Sone Yuji;Arae Sadanori;Kusayanagi Minehide |
| 分类号 |
G09G3/3225;G09G3/34;H01L27/12 |
主分类号 |
G09G3/3225 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A field-effect transistor comprising:
a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes an oxide including silicon and one or two or more alkaline earth metal elements. |
| 地址 |
Kanagawa JP |
