| 摘要 |
Provided is a semiconductor optical device, an arrayed semiconductor optical device, an optical module having a structure to reduce the parasitic capacitance as well as a high design degree of freedom and having a multilayer structure in which a semi-insulating substrate, a first semiconductor layer having one conductive type, an active layer having light emission function, a second semiconductor layer having the other conductive type, an insulating layer, and a conductive layer are stacked in order from the bottom. The multilayer structure includes a light emitting structure, a first electrode structure, and a second electrode structure. In the semi-insulating substrate and the first semiconductor layer, a first grove which separates the second electrode structure from a remaining portion and approaches the second electrode structure with a non-linear shape rather than a linear shape in its entirety is formed. |
| 主权项 |
1. A semiconductor optical device comprising:
a multilayer structure in which
a semi-insulating substrate,a first semiconductor layer having one of p-type conductivity and n-type conductivity,an active layer having light emission function,a second semiconductor layer having conductivity opposite to that of the first semiconductor layer,an insulating layer, andan conductive layer are stacked in order from the bottom, wherein the multilayer structure includes a light emitting structure, a first electrode structure, and a second electrode structure, wherein in the semi-insulating substrate and the first semiconductor layer, a first groove, which separates the second electrode structure from a remaining portion and approaches the second electrode structure with a non-linear shape rather than a linear shape in its entirety, is formed, wherein the remaining portion of the first semiconductor layer separated by the first groove continues from the light emitting structure to the first electrode structure, wherein the active layers is formed on each of the light emitting structure, the first electrode structure, and the second electrode structure to be separated, wherein the second semiconductor layer is formed on each of the light emitting structure, the first electrode structure, and the second electrode to be separated, wherein the insulating layer is formed to cover the first semiconductor layer and expose a portion of the second semiconductor layer in the light emitting structure, cover the second semiconductor layer in the first electrode structure, cover the first semiconductor layer and the second semiconductor layer in the second electrode structure, and cover the first semiconductor layer in the inner surface of the first groove, and wherein the conductive layer includes a first wiring pattern contacting the first semiconductor layer and reaching the upper end of the first electrode structure and a second wiring pattern contacting the second semiconductor layer in the light emitting structure and reaching the upper end of the second electrode structure through above the insulating layer in the inner side of the first groove. |
