| 发明名称 |
QUANTUM DOTS, PRODUCTION METHODS THEREOF, AND ELECTRONIC DEVICES INCLUDING THE SAME |
| 摘要 |
A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1:;ABX3+α Chemical Formula 1;wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers |
| 申请公布号 |
US2017121598(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615335700 |
申请日期 |
2016.10.27 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MIN Jihyun;JANG Eun Joo;KIM Yongwook;PARK Garam |
| 分类号 |
C09K11/02;C09K11/61;C08K3/16;C09K11/88 |
主分类号 |
C09K11/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A quantum dot having a perovskite crystal structure and comprising a compound represented by Chemical Formula 1:
ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers. |
| 地址 |
Suwon-si KR |
