发明名称 |
LIGHT-EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME |
摘要 |
The light-emitting element provides: a light-emitting structure, which comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. A first electrode is disposed under a first region under the light-emitting structure and electrically connected to the second conductive semiconductor layer; a second electrode disposed under a second region under the light-emitting structure and electrically connected to the first conductive semiconductor layer. A connection electrode is connected the second electrode with the first conductive semiconductor layer. An insulating layer is disposed between the first and second electrodes; a first protective layer is disposed around the lower circumference of the light-emitting structure; and a second protective layer is disposed between the insulating layer and the light-emitting structure. |
申请公布号 |
US2017125642(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201515317034 |
申请日期 |
2015.06.02 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
JEONG Hwan Hee |
分类号 |
H01L33/46;H01L33/06;H01L33/32;H01L33/50;H01L33/62;H01L33/00;H01L33/64;H01L33/56;H01L33/22;H01L33/40 |
主分类号 |
H01L33/46 |
代理机构 |
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代理人 |
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主权项 |
1. A light emitting device comprising:
a light emitting structure comprising a first conductive-type semiconductor layer, an active layer under the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer under the active layer; a first electrode disposed under a first region of a bottom surface of the light emitting structure and electrically connected to the second conductive-type semiconductor layer; a second electrode disposed under a second region of the bottom surface of the light emitting structure and electrically connected to the first conductive-type semiconductor layer; a connection electrode electrically connected between the second electrode and the first conductive-type semiconductor layer; an insulating layer disposed between the first and second electrodes; a first protective layer disposed around an outer periphery of the bottom surface of the light emitting structure; and a second protective layer disposed between the insulating layer and the light emitting structure, wherein the second protective layer is disposed on the insulating layer and has a width larger than a width of the insulating layer in a first direction, wherein the second protective layer is formed of an insulating material, and wherein a bottom surface of the connection electrode is disposed a lower position than that of a top surface of the insulating layer. |
地址 |
Seoul KR |