| 发明名称 |
COMBO AMORPHOUS AND LTPS TRANSISTORS |
| 摘要 |
The present disclosure generally relates to an improved large area substrate thin film transistor device, and method of fabrication thereof. More specifically, amorphous and LTPS transistors are formed by first forming an amorphous silicon layer, annealing the amorphous silicon layer to form polycrystalline silicon, depositing a masking layer over a first portion of the polycrystalline silicon layer, implanting a second portion of the polycrystalline silicon layer with an amorphizing species, and removing the masking layer. |
| 申请公布号 |
US2017125606(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615278510 |
申请日期 |
2016.09.28 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
NUNAN Peter;ZHANG Xuena |
| 分类号 |
H01L29/786;H01L21/268;H01L21/324;H01L21/266;H01L29/66;H01L21/02 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a thin film transistor on a large area substrate, comprising:
forming a film, comprising:
a nitride layer;an oxide layer;and an amorphous silicon layer; annealing the film; depositing a masking layer over a first portion of the film; implanting a second portion of the film with an amorphizing species; and removing the masking layer. |
| 地址 |
Santa Clara CA US |
