SEMICONDUCTOR DEVICE

摘要

A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.

主权项

1. A semiconductor device, comprising:
a first fin-type pattern comprising a first side surface and a second, opposite side surface; a first trench of a first depth in contact with the first side surface; a second trench of a second depth in contact with the second side surface, wherein the second depth is different from the first depth; a first field insulating film partially filling the first trench; and a second field insulating film partially filling the second trench, wherein the first fin-type pattern comprises a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion, and the first field insulating film comprises a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.