| 发明名称 |
SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS |
| 摘要 |
A semiconductor apparatus includes an electron transit layer formed of a nitride semiconductor over a substrate; an electron supply layer formed of a nitride semiconductor including In over the electron transit layer; a cap layer formed of a nitride semiconductor over the electron supply layer; an insulation film formed over the cap layer; a source electrode and a drain electrode formed over the electron transit layer or the electron supply layer; and a gate electrode formed over the cap layer. A quantum well is formed by the cap layer. |
| 申请公布号 |
US2017125561(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615290329 |
申请日期 |
2016.10.11 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
Makiyama Kozo |
| 分类号 |
H01L29/778;H01L29/12;H01L29/20;H01L29/423 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor apparatus, comprising:
an electron transit layer formed of a nitride semiconductor over a substrate; an electron supply layer formed of a nitride semiconductor including In over the electron transit layer; a cap layer formed of a nitride semiconductor over the electron supply layer; an insulation film formed over the cap layer; a source electrode and a drain electrode formed over the electron transit layer or the electron supply layer; and a gate electrode formed over the cap layer, wherein a quantum well is formed by the cap layer. |
| 地址 |
Kawasaki-shi JP |
