SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes transistor cells formed inside a semiconductor body. First and second semiconductor well regions have second conductivity type dopants and are arranged external of the transistor cells. The first semiconductor well region is arranged between two transistor cells and the second semiconductor well region is electrically connected with a load contact. A separation region has first conductivity type dopants and extends from a surface of the semiconductor body along the vertical direction and is arranged between and in contact with each of the first and second semiconductor well regions. The first semiconductor well region extends at least as deep as each of body regions of two transistor cells. A transition in a first lateral direction between the separation and first semiconductor well regions extends continuously from the surface to a point in the semiconductor body at least as deep as each body region of two transistor cells.

主权项

1. A semiconductor device comprising:
a semiconductor body having a surface and including a drift region having dopants of a first conductivity type; a first load contact configured to feed a load current into the semiconductor body and being arranged in contact with the surface; and a plurality of transistor cells formed at least partially inside the semiconductor body, each transistor cell including a section of the drift region and a body region having dopants of a second conductivity type complementary to the first conductivity type, wherein a transition between the body region and the drift region forms a pn-junction; wherein the semiconductor body further comprises: at least one first semiconductor well region having dop ants of the second conductivity type and being arranged external of the transistor cells and at least partially between at least two transistor cells, and extending from the surface along a vertical direction at least as deep as each of the body regions of the at least two transistor cells; at least one second semiconductor well region having dopants of the second conductivity type and being arranged external of the transistor cells, wherein the at least one second semiconductor well region is electrically connected with the first load contact; and at least one separation region extending from the surface along the vertical direction and having dop ants of the first conductivity type and being arranged between and in contact with each of the at least one first semiconductor well region and the at least one second semiconductor well region, wherein a transition in a first lateral direction between the at least one separation region and the at least one first semiconductor well region extends continuously from the surface to a point in the semiconductor body positioned at least as deep as each of the body regions of the at least two transistor cells.