发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 A method for fabricating semiconductor device includes the steps of: providing a substrate having at least a fin-shaped structure thereon and the fin-shaped structure includes a top portion and a bottom portion; forming a gate structure on the fin-shaped structure; forming a cap layer on the top portion of the fin-shaped structure not covered by the gate structure; performing an annealing process to drive germanium from the cap layer to the top portion of the fin-shaped structure; removing the cap layer; and forming an epitaxial layer around the top portion of the fin-shaped structure.
申请公布号 US2017125552(A1) 申请公布日期 2017.05.04
申请号 US201715403187 申请日期 2017.01.11
申请人 UNITED MICROELECTRONICS CORP. 发明人 Tung Yu-Cheng;Liou En-Chiuan
分类号 H01L29/66;H01L29/78;H01L21/02;H01L21/225;H01L21/306 主分类号 H01L29/66
代理机构 代理人
主权项 1. A method for fabricating semiconductor device, comprising: providing a substrate having at least a fin-shaped structure thereon, wherein the fin-shaped structure comprises a top portion and a bottom portion; forming a gate structure on the fin-shaped structure; forming a cap layer on the top portion of the fin-shaped structure not covered by the gate structure; performing an annealing process to drive germanium from the cap layer to the top portion of the fin-shaped structure; removing the cap layer; and forming an epitaxial layer around the top portion of the fin-shaped structure.
地址 Hsin-Chu City TW