发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method for fabricating semiconductor device includes the steps of: providing a substrate having at least a fin-shaped structure thereon and the fin-shaped structure includes a top portion and a bottom portion; forming a gate structure on the fin-shaped structure; forming a cap layer on the top portion of the fin-shaped structure not covered by the gate structure; performing an annealing process to drive germanium from the cap layer to the top portion of the fin-shaped structure; removing the cap layer; and forming an epitaxial layer around the top portion of the fin-shaped structure. |
申请公布号 |
US2017125552(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201715403187 |
申请日期 |
2017.01.11 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Tung Yu-Cheng;Liou En-Chiuan |
分类号 |
H01L29/66;H01L29/78;H01L21/02;H01L21/225;H01L21/306 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate having at least a fin-shaped structure thereon, wherein the fin-shaped structure comprises a top portion and a bottom portion; forming a gate structure on the fin-shaped structure; forming a cap layer on the top portion of the fin-shaped structure not covered by the gate structure; performing an annealing process to drive germanium from the cap layer to the top portion of the fin-shaped structure; removing the cap layer; and forming an epitaxial layer around the top portion of the fin-shaped structure. |
地址 |
Hsin-Chu City TW |