| 发明名称 |
GROUP III-NITRIDE COMPOUND HETEROJUNCTION TUNNEL FIELD-EFFECT TRANSISTORS AND METHODS FOR MAKING THE SAME |
| 摘要 |
A tunnel field-effect transistor device includes a p-type GaN source layer, an n-type GaN drain layer, and an interlayer interfaced between the source-layer and the drain layer. In one example, the interlayer includes an Indium Nitride (InN) layer. In one example, the interlayer includes a graded Indium gallium nitride layer and an InN layer. In one example, the interlayer may include a graded Indium gallium nitride (InxGa1-xN) layer and an Indium gallium nitride (InGaN) layer. In one example, the tunnel field-effect transistor device includes an in-line configuration. In one example, the tunnel field-effect transistor device includes a side-wall configuration. |
| 申请公布号 |
US2017125521(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201514925542 |
申请日期 |
2015.10.28 |
| 申请人 |
University of Notre Dame du Lac |
发明人 |
Fay Patrick;Li Wenjun;Jena Debdeep |
| 分类号 |
H01L29/08;H01L29/78;H01L29/20 |
主分类号 |
H01L29/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A tunnel field-effect transistor comprising:
a source-layer including p-type GaN; a drain-layer including n-type GaN; and an interlayer interfaced between the source-layer and the drain layer, wherein the interlayer includes an InN layer. |
| 地址 |
Notre Dame IN US |
