METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed over a substrate; a first insulating film is formed over the first conductive film; a semiconductor film is formed over the first insulating film; a semiconductor film including a channel region is formed by etching part of the semiconductor film; a second insulating film is formed over the semiconductor film; a mask is formed over the second insulating film; a first portion of the second insulating film that overlaps the semiconductor film and second portions of the first insulating film and the second insulating film that do not overlap the semiconductor film are removed with the use of the mask; the mask is removed; and a second conductive film electrically connected to the semiconductor film is formed over at least part of the second insulating film.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first conductive film over a substrate; forming a first insulating film over the first conductive film; forming a semiconductor film over the first insulating film; etching the semiconductor film; forming a second insulating film over the semiconductor film; forming a mask over the second insulating film; removing first portions of the first insulating film and the second insulating film with the use of the mask to form a first opening, and removing a second portion of the second insulating film with the use of the mask to form a second opening; removing the mask; and forming a second conductive film over the second insulating film, the second conductive film electrically connected to the semiconductor film through the second opening, wherein the semiconductor film and the first portions do not overlap each other, and the semiconductor film and the second portion overlap each other, and wherein the semiconductor film includes a channel region.