| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
The present invention provides a semiconductor device including a semiconductor substrate, a first well, a second well, a gate electrode, an oxide semiconductor structure and a diode. The first well is disposed in the semiconductor substrate and has a first conductive type, and the second well is also disposed in the semiconductor substrate, adjacent to the first well, and has a second conductive type. The gate electrode is disposed on the first well. The oxide semiconductor structure is disposed on the semiconductor substrate and electrically connected to the second well. The diode is disposed between the first well and the second well. |
| 申请公布号 |
US2017125402(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201514956398 |
申请日期 |
2015.12.02 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
ZHOU ZHIBIAO;Lin Chen-Bin;Xing Su;Shuai Chi-Chang;Lee Chung-Yuan |
| 分类号 |
H01L27/06;H01L29/861;H01L49/02;H01L29/22;H01L29/06;H01L23/535;H01L29/10;H01L29/24 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate; a first well, disposed in the semiconductor substrate and having a first conductive type; a second well disposed in the semiconductor substrate, adjacent to the first well and having a second conductive type; a gate electrode disposed on the first well; an oxide-semiconductor structure, disposed on the semiconductor substrate and electrically connected to the second well; and a diode disposed between the first well and the second well. |
| 地址 |
Hsin-Chu City TW |
