| 发明名称 |
UNIFORM DIELECTRIC RECESS DEPTH DURING FIN REVEAL |
| 摘要 |
A method for providing a uniform recess depth between different fin gap sizes includes depositing a dielectric material between fins on a substrate. Etch lag is tuned for etching the dielectric material between narrow gaps faster than the dielectric material between wider gaps such that the dielectric material in the narrow gaps reaches a target depth. An etch block is formed in the narrow gaps. The wider gaps are etched to the target depth. The etch block is removed. |
| 申请公布号 |
US2017125286(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201514928817 |
申请日期 |
2015.10.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Briggs Benjamin D.;Clevenger Lawrence A.;Rizzolo Michael;Strane Jay W. |
| 分类号 |
H01L21/762;H01L21/3105;H01L21/311;H01L21/8234;H01L21/306 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for providing a uniform recess depth between different fin gap sizes, comprising:
depositing a dielectric material between fins on a substrate; tuning reactive ion etch lag for etching the dielectric material between narrow gaps faster than the dielectric material between wider gaps such that the dielectric material in the narrow gaps reaches a target depth; forming an etch block in the narrow gaps; etching the wider gaps to the target depth; and removing the etch block. |
| 地址 |
Armonk NY US |
