发明名称 GAS SUPPLY UNIT AND SUBSTRATE PROCESSING SYSTEM
摘要 A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.
申请公布号 US2017121820(A1) 申请公布日期 2017.05.04
申请号 US201615289619 申请日期 2016.10.10
申请人 Samsung Electronics Co., Ltd. 发明人 Chung Sukjin;Lee JongCheol;Jung MinHwa;Shin Jaechul;Yi In-Sun;Choi Geunkyu;Ahn Jungil;Lee Seung Han;Heo Jin Pil
分类号 C23C16/52;C23C16/44;C23C16/455 主分类号 C23C16/52
代理机构 代理人
主权项 1. A substrate processing system comprising: a process chamber in which a process on a substrate is performed; a supporting unit in the process chamber and configured to support the substrate; a gas supply unit including a gas supply part with gas supply holes, the gas supply holes being configured to supply a process gas onto the substrate; and an exhaust unit configured to exhaust the process gas from the process chamber, wherein the gas supply part includes a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit, and the gas diffusion region is free of the gas supply holes.
地址 Suwon-si KR