发明名称 |
GAS SUPPLY UNIT AND SUBSTRATE PROCESSING SYSTEM |
摘要 |
A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes. |
申请公布号 |
US2017121820(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201615289619 |
申请日期 |
2016.10.10 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Chung Sukjin;Lee JongCheol;Jung MinHwa;Shin Jaechul;Yi In-Sun;Choi Geunkyu;Ahn Jungil;Lee Seung Han;Heo Jin Pil |
分类号 |
C23C16/52;C23C16/44;C23C16/455 |
主分类号 |
C23C16/52 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate processing system comprising:
a process chamber in which a process on a substrate is performed; a supporting unit in the process chamber and configured to support the substrate; a gas supply unit including a gas supply part with gas supply holes, the gas supply holes being configured to supply a process gas onto the substrate; and an exhaust unit configured to exhaust the process gas from the process chamber, wherein the gas supply part includes a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit, and the gas diffusion region is free of the gas supply holes. |
地址 |
Suwon-si KR |