METHOD OF FORMING SEMICONDUCTOR DEVICE

摘要

A method of forming a semiconductor device is provided. At least two shallow trenches are formed in a substrate. An insulating layer is formed on surfaces of the substrate and the shallow trenches. A conductive layer is formed on the substrate between the shallow trenches. At least one spacer is formed on a sidewall of the conductive layer, wherein the spacer fills up each shallow trench.

主权项

1. A method of forming a semiconductor device, comprising:
forming at least two shallow trenches in a substrate; forming an insulating layer on surfaces of the substrate and the shallow trenches; forming a conductive layer on the substrate between the shallow trenches; and forming at least one spacer on a sidewall of the conductive layer, wherein the shallow trenches are completely filled with the at least one spacer.