NON-VOLATILE MEMORY DEVICES AND MANUFACTURING METHODS THEREOF

摘要

There is provided a method of manufacturing a non-volatile memory device including: alternatively stacking a plurality of insulating layers and a plurality of conductive layers on a top surface of a substrate; forming an opening that exposes the top surface of the substrate and lateral surfaces of the insulating layers and the conductive layers; forming an anti-oxidation layer on at least the exposed lateral surfaces of the conductive layers; forming a gate dielectric layer on the anti-oxidation layer, the gate dielectric layer including a blocking layer, an electric charge storage layer, and a tunneling layer that are sequentially formed on the anti-oxidation layer; and forming a channel region on the tunneling layer.

主权项

1. A non-volatile memory device, comprising:
a channel region extending in a direction perpendicular to an upper surface of a substrate; gate electrodes and interlayer insulating layers alternately stacked on the upper surface of the substrate along outer side walls of the channel region; a gate dielectric layer including a tunneling layer, an electric charge storage layer, and a blocking layer including a high-k layer and a low-k layer that is between the high-k layer and the electric charge storage layer, the tunneling layer, the electric charge storage layer, and the blocking layer being sequentially disposed between the channel region and the gate electrodes; and an anti-oxidation layer disposed between the blocking layer and the gate electrodes to protect the gate electrodes from oxidation.