| 发明名称 |
ETCH STOP FOR AIRGAP PROTECTION |
| 摘要 |
A semiconductor device that includes a gate structure on a channel region of a semiconductor device. Source and drain regions may be present on opposing sides of the channel region. The semiconductor device may further include a composite gate sidewall spacer present on a sidewall of the gate structure. The composite gate sidewall spacer may include a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid and present atop the first composition portion. |
| 申请公布号 |
US2017125539(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201615233315 |
申请日期 |
2016.08.10 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION ;GLOBALFOUNDRIES INC. |
发明人 |
Cheng Kangguo;Xie Ruilong;Yamashita Tenko |
| 分类号 |
H01L29/49;H01L29/40;H01L29/66;H01L29/78;H01L29/423 |
主分类号 |
H01L29/49 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a gate structure on a channel region of a semiconductor device, wherein source and drain regions are on opposing sides of the channel region; and a composite gate sidewall spacer present on a sidewall of the gate structure, wherein the composite gate sidewall spacer includes a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid. |
| 地址 |
Armonk NY US |
