| 发明名称 |
Method of Manufacturing a Semiconductor Device with Field Electrode Structures, Gate Structures and Auxiliary Diode Structures |
| 摘要 |
A method of manufacturing a semiconductor device includes: forming field electrode structures extending in a direction vertical to a first surface in a semiconductor body; forming cell mesas from portions of the semiconductor body between the field electrode structures, including body zones forming first pn junctions with a drift zone; forming gate structures between the field electrode structures and configured to control a current flow through the body zones; and forming auxiliary diode structures with a forward voltage lower than the first pn junctions and electrically connected in parallel with the first pn junctions, wherein semiconducting portions of the auxiliary diode structures are formed in the cell mesas. |
| 申请公布号 |
US2017125520(A1) |
申请公布日期 |
2017.05.04 |
| 申请号 |
US201715400754 |
申请日期 |
2017.01.06 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Siemieniec Ralf;Blank Oliver;Hirler Franz;Vielemeyer Martin Henning |
| 分类号 |
H01L29/06;H01L29/40;H01L29/739;H02M1/088;H01L29/872;H01L29/66;H02M3/335;H01L29/10;H01L29/78 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming field electrode structures extending in a direction vertical to a first surface in a semiconductor body; forming cell mesas from portions of the semiconductor body between the field electrode structures, including zones forming first pn junctions with a drift zone; forming gate structures between the field electrode structures and configured to control a current flow through the body zones; and forming auxiliary node structures with a forward voltage lower than the first pn junctions and electrically connected in parallel with the first pn junctions, wherein semiconducting portions of the auxiliary diode structures are formed in the cell mesas. |
| 地址 |
Villach AT |
