发明名称 |
SUPER JUNCTION MOSFET DEVICE AND SEMICONDUCTOR CHIP |
摘要 |
A super junction MOSFET device including a semiconductor substrate; a base region provided on a primary surface side of the semiconductor substrate and having impurities of a first conductivity type; a source region that includes a portion of a frontmost surface of the base region and has impurities of a second conductivity type; a gate electrode that penetrates through the base region; a source electrode that is provided on the base region and is electrically connected to the source region; and a front surface region that is provided on an entirety of the frontmost surface of the base region in a region differing from a region where the source region and the gate electrode are provided in the base region, is electrically connected to the source electrode provided on the base region, and has a lower impurity concentration of impurities of the second conductivity type than the source region. |
申请公布号 |
US2017125515(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201615247933 |
申请日期 |
2016.08.26 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
SHIRAKAWA Tohru;NAITO Tatsuya;MIYAZAWA Shigemi |
分类号 |
H01L29/06;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
1. A super junction MOSFET device comprising:
a semiconductor substrate; a base region that is provided on a primary surface side of the semiconductor substrate and has impurities of a first conductivity type; a source region that includes a portion of a frontmost surface of the base region and has impurities of a second conductivity type; a gate electrode that penetrates through the base region; a source electrode that is provided on the base region and is electrically connected to the source region; and a front surface region that is provided on an entirety of the frontmost surface of the base region in a region differing from a region where the source region and the gate electrode are provided in the base region, is electrically connected to the source electrode provided on the base region, and has a lower impurity concentration of impurities of the second conductivity type than the source region. |
地址 |
Kanagawa JP |