发明名称 |
COMPLEMENTARY METAL GRID AND DEEP TRENCH ISOLATION IN CIS APPLICATION |
摘要 |
A CMOS image sensor structure includes a substrate and pixel portions. Each pixel portion includes intersection areas, the border areas each of which is located between any two adjacent ones of the intersection areas, and a central area surrounded by the intersection areas and the border areas. Each pixel portion includes a device layer, an anti-reflective coating layer, discrete reflective structures, discrete metal blocking structures, a passivation layer and a color filter. The device layer is disposed on the substrate. Trenches are formed in the device layer and the substrate corresponding to the border areas respectively. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed in the trenches. The metal blocking structures overly the anti-reflective coating layer in the intersection areas. The passivation layer conformally covers the metal blocking structures. The color filter is disposed on the passivation layer. |
申请公布号 |
US2017125459(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201514925576 |
申请日期 |
2015.10.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TSAI Bo-Tsung;CHOU Chun-Hao;TSAI Tsung-Han;LEE Kuo-Cheng;HSU Yung-Lung;CHENG Yun-Wei |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
1. A CMOS image sensor structure, comprising:
a substrate; and a plurality of pixel portions disposed adjacent to each other on the substrate, wherein each of the pixel portions comprises a plurality of intersection areas, a plurality of border areas each of which is located between any two adjacent ones of the intersection areas, and a central area surrounded by the intersection areas and the border areas, wherein each of the pixel portions comprises: a device layer disposed in the intersection areas, the border areas and the central area on the substrate, wherein a plurality of trenches are formed in the device layer and the substrate corresponding to the border areas respectively; an anti-reflective coating layer conformally covering the device layer, the substrate and the trenches; a plurality of discrete reflective structures disposed on the anti-reflective coating layer in the trenches respectively; a plurality of discrete metal blocking structures overlying the anti-reflective coating layer in the intersection areas respectively; a passivation layer conformally covering the metal blocking structures, the anti-reflective coating layer, and the reflective structures; and a color filter disposed on the passivation layer in the intersection areas, the border areas, and the central area. |
地址 |
Hsinchu TW |