发明名称 COMPLEMENTARY METAL GRID AND DEEP TRENCH ISOLATION IN CIS APPLICATION
摘要 A CMOS image sensor structure includes a substrate and pixel portions. Each pixel portion includes intersection areas, the border areas each of which is located between any two adjacent ones of the intersection areas, and a central area surrounded by the intersection areas and the border areas. Each pixel portion includes a device layer, an anti-reflective coating layer, discrete reflective structures, discrete metal blocking structures, a passivation layer and a color filter. The device layer is disposed on the substrate. Trenches are formed in the device layer and the substrate corresponding to the border areas respectively. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed in the trenches. The metal blocking structures overly the anti-reflective coating layer in the intersection areas. The passivation layer conformally covers the metal blocking structures. The color filter is disposed on the passivation layer.
申请公布号 US2017125459(A1) 申请公布日期 2017.05.04
申请号 US201514925576 申请日期 2015.10.28
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 TSAI Bo-Tsung;CHOU Chun-Hao;TSAI Tsung-Han;LEE Kuo-Cheng;HSU Yung-Lung;CHENG Yun-Wei
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A CMOS image sensor structure, comprising: a substrate; and a plurality of pixel portions disposed adjacent to each other on the substrate, wherein each of the pixel portions comprises a plurality of intersection areas, a plurality of border areas each of which is located between any two adjacent ones of the intersection areas, and a central area surrounded by the intersection areas and the border areas, wherein each of the pixel portions comprises: a device layer disposed in the intersection areas, the border areas and the central area on the substrate, wherein a plurality of trenches are formed in the device layer and the substrate corresponding to the border areas respectively; an anti-reflective coating layer conformally covering the device layer, the substrate and the trenches; a plurality of discrete reflective structures disposed on the anti-reflective coating layer in the trenches respectively; a plurality of discrete metal blocking structures overlying the anti-reflective coating layer in the intersection areas respectively; a passivation layer conformally covering the metal blocking structures, the anti-reflective coating layer, and the reflective structures; and a color filter disposed on the passivation layer in the intersection areas, the border areas, and the central area.
地址 Hsinchu TW