DYNAMIC RANDOM ACCESS MEMORY

摘要

A dynamic random access memory (DRAM) includes a substrate, isolation structures, buried word lines, bit lines, and capacitors. The substrate includes active areas configured into strips and arranged as an array. The isolation structures are disposed in trenches of the substrate. Each isolation structure is disposed between two adjacent active areas. The buried word lines are disposed in parallel in a first direction in the trenches. Each buried word line divides each active area arranged in the same column into a first contact region and a second contact region. The bit lines are disposed in parallel in a second direction on the substrate and across the buried word lines. A longitudinal direction of the active areas is non-orthogonal to the second direction. Each bit line is electrically connected with the first contact regions in the same row. The capacitors are electrically connected with the corresponding second contact regions respectively.

主权项

1. A dynamic random access memory, comprising:
a substrate comprising a plurality of active areas that are configured into a strip and arranged as an array; a plurality of isolation structures disposed in a trench of the substrate, wherein each of the isolation structures is disposed between two adjacent active areas; a plurality of buried word lines disposed in parallel in a first direction in the trench of the substrate, wherein each of the buried word lines divides each of the active areas arranged in the same column into a first contact region and a second contact region; a plurality of bit lines disposed in parallel in a second direction on the substrate and across the buried word lines, wherein a longitudinal direction of the active areas is non-orthogonal to the second direction, and each of the bit lines is connected with the first contact regions of the active areas arranged in the same row; and a plurality of capacitors electrically connected with the second contact regions of the active areas respectively.