SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE, METHOD FOR MANUFACTURING THE SAME, MEMORY CELL HAVING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME

摘要

A semiconductor device includes a substrate including a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned in the trench at a level lower than a top surface of the substrate, and including a first buried portion and a second buried portion over the first buried portion; and a first doping region and a second doping region formed in the substrate on both sides of the gate electrode, and overlapping with the second buried portion, wherein the first buried portion includes a first barrier which has a first work function, and the second buried portion includes a second barrier which has a second work function lower than the first work function.

主权项

1. A semiconductor device comprising:
a substrate including a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned in the trench and at a level lower than a top surface of the substrate, wherein the gate electrode includes a first buried portion and a second buried portion, wherein the second buried portion is formed over the first buried portion; and a first doping region and a second doping region formed in the substrate and over first and second sides of the gate electrode, wherein each of the first doping region and the second doping region overlaps the second buried portion, wherein the first buried portion includes a first barrier with a first work function, wherein the second buried portion includes second barrier with a second work function, and wherein the second work function is lower than the first work function.