发明名称 CONNECTOR FORMATION METHODS AND PACKAGED SEMICONDUCTOR DEVICES
摘要 Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer with a pattern for a first portion of a connector. A first metal layer is plated through the patterned first photoresist layer to form the first portion of the connector which has a first width. A second photoresist layer is formed over the interconnect structure and the first portion of the connector. The second photoresist layer is patterned with a pattern for a second portion of the connector. A second metal layer is plated through the patterned second photoresist layer to form the second portion of the connector over the first portion of the connector. The second portion of the connector has a second width, the second width being less than the first width.
申请公布号 US2017125365(A1) 申请公布日期 2017.05.04
申请号 US201514929016 申请日期 2015.10.30
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Cheng Jung Wei;Chen Hai-Ming;Lee Chien-Hsun;Hou Hao-Cheng;Lin Hung-Jen;Chuang Chun-Chih;Liu Ming-Che;Wang Tsung-Ding
分类号 H01L23/00;H01L21/311;H01L23/528;H01L25/065;H01L23/522;H01L21/31;H01L21/3205 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method of forming a connector, the method comprising: forming a first layer of photoresist over an interconnect structure; patterning the first layer of photoresist with a first pattern to form a patterned first layer of photoresist, wherein the first pattern corresponds to a first portion of a connector; plating a first metal layer through the patterned first layer of photoresist to form the first portion of the connector, the first portion of the connector comprising a first width; forming a second layer of photoresist over the interconnect structure and the first portion of the connector, wherein at least a portion of the second layer of photoresist is disposed below an upper-most surface of the first layer of photoresist; patterning the second layer of photoresist with a second pattern to form a patterned second layer of photoresist, wherein the second pattern corresponds to a second portion of the connector; and plating a second metal layer through the patterned second layer of photoresist to form the second portion of the connector over the first portion of the connector, the second portion of the connector comprising a second width, the second width being less than the first width.
地址 Hsin-Chu TW