INTEGRATION OF BONDED OPTOELECTRONICS, PHOTONICS WAVEGUIDE AND VLSI SOI

摘要

An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.

主权项

1. An optoelectronic device, comprising:
an integrated circuit including electronic devices formed on a front side of a semiconductor substrate; a barrier layer formed on a back side of the semiconductor substrate; a photonics layer formed on the barrier layer, the photonics layer including a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core, the core configured to couple light generated from at least one component of the optoelectronic device; and a photodiode or laser bonded to the barrier layer and formed within the cladding layer to couple light into the core.