发明名称 |
READ THRESHOLD VOLTAGE ADAPTATION USING BIT ERROR RATES BASED ON DECODED DATA |
摘要 |
A read threshold voltage for a memory is adjusted based on a bit error rate based on decoded data for a plurality of read threshold voltages. The read threshold voltage can be adjusted by reading the memory at a current read threshold voltage to obtain a read value; applying a hard decision decoder to the read value; determining if the hard decision decoder converges for the read value to a converged word; storing bits corresponding to the converged word as reference bits and, if the hard decision decoder converges, (i) computing a bit error rate for the current read threshold voltage based on the reference bits; (ii) adjusting the current read reference voltage to a new read threshold voltage; and (iii) reading the memory at the new read threshold voltage to obtain a new read value, until a threshold is satisfied; and once the threshold is satisfied, selecting the read threshold voltage based on the bit error rates. |
申请公布号 |
US2017125111(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201514928284 |
申请日期 |
2015.10.30 |
申请人 |
Seagate Technology LLC |
发明人 |
Sankaranarayanan Sundararajan;Alhussien AbdelHakim Salem;Chen Zhengang;Haratsch Erich F. |
分类号 |
G11C16/26;G06F11/07 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
1. A device comprising:
a controller configured to adjust a read threshold voltage for a memory based on a bit error rate based on decoded data for a plurality of read threshold voltages. |
地址 |
Cupertino CA US |