发明名称 READ THRESHOLD VOLTAGE ADAPTATION USING BIT ERROR RATES BASED ON DECODED DATA
摘要 A read threshold voltage for a memory is adjusted based on a bit error rate based on decoded data for a plurality of read threshold voltages. The read threshold voltage can be adjusted by reading the memory at a current read threshold voltage to obtain a read value; applying a hard decision decoder to the read value; determining if the hard decision decoder converges for the read value to a converged word; storing bits corresponding to the converged word as reference bits and, if the hard decision decoder converges, (i) computing a bit error rate for the current read threshold voltage based on the reference bits; (ii) adjusting the current read reference voltage to a new read threshold voltage; and (iii) reading the memory at the new read threshold voltage to obtain a new read value, until a threshold is satisfied; and once the threshold is satisfied, selecting the read threshold voltage based on the bit error rates.
申请公布号 US2017125111(A1) 申请公布日期 2017.05.04
申请号 US201514928284 申请日期 2015.10.30
申请人 Seagate Technology LLC 发明人 Sankaranarayanan Sundararajan;Alhussien AbdelHakim Salem;Chen Zhengang;Haratsch Erich F.
分类号 G11C16/26;G06F11/07 主分类号 G11C16/26
代理机构 代理人
主权项 1. A device comprising: a controller configured to adjust a read threshold voltage for a memory based on a bit error rate based on decoded data for a plurality of read threshold voltages.
地址 Cupertino CA US