Non-Volatile Memory Systems with Multi-Write Direction Memory Units

摘要

Non-volatile memory systems with multi-write direction memory units are disclosed. In one implementation an apparatus comprises a non-volatile memory and a controller in communication with the non-volatile memory. The controller is configured to select an empty memory block of the non-volatile memory for the storage of data; examine an identifier associated with the memory block to determine a write direction for the storage of data; and write data to the memory block beginning with an initial word line of the memory block or a last word line of the memory block dependent on the write direction. The controller is further configured to erase the memory unit and, in response to erasing the memory unit, modify the identifier to change the write direction for a subsequent write of data to the memory block.

主权项

1. In a controller of a non-volatile memory system that is coupled with a host device, a method comprising:
selecting a memory unit of a non-volatile memory of the non-volatile memory system that is empty for storage of data; examining an identifier associated with the memory unit to determine a write direction for the storage of data in the memory unit, the write direction indicating whether to store data to the memory unit in one of a forward write direction or a reverse write direction; and writing data to the memory unit in the write direction; wherein writing data to the memory unit in the forward write direction comprises writing data to the memory unit beginning with an initial word line of the memory unit and continuing to write data to a next sequential word line in a direction of a last word line of the memory unit; and wherein writing data to the memory unit in the reverse write direction comprises writing data to the memory unit beginning with the last word line of the memory unit and continuing to write data to a next sequential word line in a direction of the initial word line of the memory unit.