发明名称 |
STRUCTURE AND METHOD TO REDUCE SHORTING IN STT-MRAM DEVICE |
摘要 |
A method of making a magnetic random access memory (MRAM) device includes depositing a spacer material on an electrode; forming a magnetic tunnel junction (MTJ) on the spacer material that includes a reference layer in contact with the spacer material, a free layer, and a tunnel barrier layer; patterning a hard mask on the free layer; etching the MTJ and the spacer material to transfer a pattern of the hard mask into the MTJ and the spacer material; forming an insulating layer along a sidewall of the hard mask, the MTJ, and the spacer material; disposing an interlayer dielectric (ILD) on and around the hard mask, MTJ, and spacer material; etching through the ILD to form a trench that extends to a surface and sidewall of the hard mask and a sidewall of a portion of the MTJ; and disposing a metal in the trench to form a contact electrode. |
申请公布号 |
US2017125667(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201615202821 |
申请日期 |
2016.07.06 |
申请人 |
International Business Machines Corporation |
发明人 |
Annunziata Anthony J.;Lauer Gen P.;Marchack Nathan P. |
分类号 |
H01L43/08;H01L43/10;G11C11/16;H01L43/12;H01L43/02 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
1. A method of making a magnetic random access memory (MRAM) device, the method comprising:
depositing a conductive spacer material on an electrode; forming a magnetic tunnel junction (MTJ) on the spacer material; patterning a hard mask on the MTJ; etching the MTJ and the conductive spacer material to transfer a pattern of the hard mask into the MTJ and the conductive spacer material; forming an insulating layer along a sidewall of the hard mask, the MTJ, and the conductive spacer material; and disposing an interlayer dielectric (ILD) on and around the hard mask, the MTJ, and the spacer material. |
地址 |
Armonk NY US |